Title of article :
Characterization of Horizontally Grown Silicon Nanowires in Aluminum Thin Films
Author/Authors :
Abushgair, Khaleel N. Al-balqa Applied University - Department of Mechanical Engineering, Jordan , Abu-Safe, Husam H. University of Arkansas - Department of Electrical Engineering, U.S.A , Naseem, Hameed A. University of Arkansas - Department of Electrical Engineering, U.S.A , EL-Sabagh, Mahmoud A. University of Arkansas - Department of Electrical Engineering, U.S.A , Rowoen, Brian L. University of Arkansas - Department of Electrical Engineering, U.S.A , Srivastava, Avnish K. National Physical Laboratory, India , El-Ghazaly, Samir M. University of Arkansas - Department of Electrical Engineering, U.S.A
From page :
79
To page :
90
Abstract :
Characterization of silicon nanowires grown horizontally through aluminum thin films was conducted. We show in our work that the fabrication process of these wires depends mainly on the thermally-activated silicon diffusion in-between the boundaries of aluminum grains. The diffusion of silicon through grain boundary is much lower than the grain bulk. Therefore, silicon starts to accumulate and form a wire shape structure along these grain boundaries. At 600□C, these accumulations form a continuous network of nanowires. The results are unique in the fact that these nanowires are pushed to grow horizontally instead of the more common vertical direction. The majority of obtained nanowires have a diameter of 75 nm and a length 5 µm.
Keywords :
Dead Sea , Water Volume and Surface Area Loss , SRTM , Based Model , Red , Dead Sea Channel , Renewable Energy and Sustainability.
Journal title :
Jordan Journal of Mechanical and Industrial Engineering
Journal title :
Jordan Journal of Mechanical and Industrial Engineering
Record number :
2643995
Link To Document :
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