Author/Authors :
Al-Haddad, Raad M. University of Baghdad - College of Science - Department of Physics, Iraq , Ali, Iftikhar M. University of Baghdad - College of Science - Department of Physics, Iraq , Ibrahim, Issam M. University of Baghdad - College of Science - Department of physics, Iraq , Al-Essa, Izzat M. University of Baghdad - College of Science - Department of Physics, Iraq
Abstract :
D.c. σ(0) and a.c conductivity σ(w) and dielectric parameter (lepsilon and tan delta) of se 60 te 30 Ge10 glassy thin films which were prepared by thermal evaporation were investigated. Measurements of a.c. conductivity over frequency range (100Hz-100kHz) and temperature range (303-363K) showed that the a.c. conductivity follows the empirical formula σ a.c (w)=Aw^s, where (s) lies between (1.03-0.60).In the glasses of Se60Te30Ge10 thin films the d.c. conductivity along localized states prevails. A.c conductivity is explained by hopping mechanism of charge transfer between two defect centers.
