A simulation study of short channel effects in conventional and lightly-doped-drain (LDD) P-Mosfets

This paper presents the comparative study of the short channel effects on both conventional and lightly doped drain (LDD) pMOSFETs. This includes the parametric study of both structures in order to determine the profile of the threshold voltage and leakage current due to the short channel effects. In this study, two critical parameters of the short channel devices were investigated including the channel length (L) and the oxide thickness (Tox). The significant effects were observed in the device especially on the leakage current mechanism includes substrate and drain currents when these two critical parameters have been scaled down. Apart from that, the influence of device processing parameter namely, source/drain ion implantation dose on the leakage current mechanism had been investigated