Studing Optical and Electrical Properties of Bi203 Thin Filam for Optoelectronic Applications

Bismuth oxide thin film has been prepared on KB7 glass substrates using slow thermal oxidizing bismuth films of thickness (80 nm) in air at 473 K for 10 hours. The structure Characterization of the film was carried out with XRD. The results of XRD technique shows that all samples have a polycrystalline and multiphase (α-Bi2O3 and β-Bi2O3). the optical transmittance in visible region was investigated. The optical energy gap (Eg = 2.5 eV) determined from absorption specter. The dark resistivity and thermoelectric power (TEP) were investigated. The electrical resistivity is of the order of 106 ohm-cm. and the thin film n-type semiconductor It was found that the activation energy Ea.