Study of Channel Surface Charge of Gallium Arsenide MESFET- Bipolar Transistor

Gallium arsenide (GaAs) MESFFT is widely used for high speed power device application since GaAs has a electron mobility compared to silicon. In contrast, GaAs bipolar transistor has not given attention because of low carrier lifetime. MESFET-Bipolar (MES-BT) transistor combines the advantages of both devices. In this paper the effect of channel surface charge on the electrical characteristics of MESFET- Bipolar transistor (MES-BT) has been investigated using computer simulator. Results show that channel surface charge should be optimized in order to provide a high anode current without causing voltage breakdown