Electronic Properties Of As Doped Crystalline Ge Compensated And Disordered By Fast Reactor Neutrons

Single crystal Ge doped by adding As 2.5x1015 atom/cc and converted into P-type disordered structure by irradiation by fast reactor neutrons with flux φ starting from 1E15 up to lE20 °/cm2The specific d.c. electrical resistivity has been measured in the temperature range (300-1.7)°k. The activation energies of different conduction mechanisms have been studied ,it has been found that ε1 ε2 ε3,The impurity conduction mechanism starting to appears in samples irradiated by 2E16 n °/cm2. Comparison between our experimental results and theories of impurity conduction had been done. This comparison leads to conclusion that it is possible to consider Ge irradiated with fast reactor neutrons as typical amorphous material It has been found that the width of Coulomb gap decrease by increasing the concentration of defect centers. Bohr s radius obtained by two different methods is ~55°A and the minimum metallic conductivity- 6,16 Ω-1 cm-1 .The Hall coefficient measured at two temperatures (300,77) °k.