Thermal annealing effects on structural properties of Si-doped/undoped a-CHthin films

Plasma enhanced chemical vapor deposition (PECVD) synthesized hydrogenated amorphous carbon (a-CH) and Sidoped a-CH (a-CH:Si) thin films shows thermal annealing temperature dependence within the temperature range 400600 C for their micro-structural as well as photoluminescence (PL) properties that are studied using the Raman spectrameasurements. In case of a-CH thin films, the PL is increases with increase of thermal annealing temperature up to400°C and then remains almost constant within the experimental error, whereas in case of a-CH:Si thin films the PL remainssame up to 400°C and then decreases above 400°C of annealing temperatures. Within this thermal stability, thesethin films could be used in the fabrication of optoelectronics devices.