Properties of a-SiC:H films and solar cells

a-SiC:H samples and solar cells were made by plasma-enhanced chemical vapor deposition (PECVD) using a multichamber deposition system. The effect of light illumination on samples prepared with and without hydrogen dilution was studied. The phototransport properties of the samples prepared with high hydrogen dilution were more stable versus time of illumination than non diluted ones. The samples were inserted as an intrinsic layer in semitransparent solar cells. The performance of solar cells depends on the energy gap and thickness of the intrinsic layer. High hydrogen dilution may increase the energy gap and act to decrease the structure uniformity. The results show that open circuit voltage Voc decreases with light illumination and depends on the doped p+ layer quality and created defects in the intrinsic layer.