Title of article :
Studying the Effect of X-ray Radiation on the Electrical Properties of Diodes 1N1405
Author/Authors :
Najim, Jassim M. Sana a University - KHAWLAN Faculty of Education Arts Science - Department of Physics, Yemen
Abstract :
The diode 1N1405 type silicon is subjected to different levels of energy and time irradiation. We have about three times; at every time we have measured the forward and reverse bias voltage of the diode to know what is the difference between the electrical properties of the same diode without irradiation of x-ray.
Keywords :
X , ray , Electrical Properties , Semiconductors.
Journal title :
International Journal of Nanoelectronics and Materials
Journal title :
International Journal of Nanoelectronics and Materials
