• Title of article

    Electronic structure, magnetic and Fermi surface calculations of heavy-fermions superconductors compounds based on Nb3Sn

  • Author/Authors

    BENDJEMIL, Badis University of Annaba - LEREC, Department of Physics, Algeria , BENDJEMIL, Badis University of Guelma, Algeria

  • From page
    91
  • To page
    99
  • Abstract
    We report a theoretical investigation of the electronic structures and Fermi surface of the heavy-fermion superconductors Nb3Sn. The electronic structures are investigated ab-initio on the basis of full-potential local orbital minimum-basis band- structure calculations (FPLO), adopting both the scalar- and fully relativistic formulations within the framework of the local spin-density approximation (LSDA). The possibility of a partial 4d localization occurring for compounds is discussed. The electronic structures of the Nb3Sn compounds are computed to be rather similar to the literature. Our total-energy calculations predict paramagnetic and ferromagnetic order to be favorable for Nb3Sn materials, which is, however, observed experimentally. Also, the calculated magnetic moment is 0.35 ìB. Furthermore, the theoretical Fermi surfaces topology and the possible origins of the superconductivity are discussed. The Bardeen, Cooper and Schreiffer (BCS) energy gap and the Ginzburg-Landau (GL) parameter K for these compounds have been calculated from the Fermi velocity. We found strong indication suggesting the existence of a second superconducting (SC) gap in Nb3Sn. In addition, the average superconductivity-gap at zero temperature is calculated for this compound. The knowledge of energy gap value gives important information on the coupling scenarios. Our results provide an explanation between the electronic structures, the Fermi surface (FS) topology and two-band model of the superconductivity.
  • Keywords
    Fermi surface , Fermi velocity , Superconducting , gap , LSDA , FPLO.
  • Journal title
    International Journal of Nanoelectronics and Materials
  • Journal title
    International Journal of Nanoelectronics and Materials
  • Record number

    2664781