Nouvelle approche de modélisation des transistors micro-ondes MESFET et HEMT

The authors present an analytical model of current drain-source based on the one established by Chalmers. As the precision of parameters is directly bound to the measured maximal value of the transconductance, a precision level of 25 % is obtained. To improve this precision, the combined optimization algorithm with the Chalmers model is elaborated. The results obtained are very satisfactory. For a mathematical function y, with three terms in the saturated region, the influence of the temperature represents correctly the drain current for the voltage near a pinch-off voltage.