Abstract :
Polycrystalline PhxSl-x photocond- uctive detectors with both value of x(0.50 0.53) were fabricated using vacuum evaporation technique at room temperature and under vacuum 10-6 mbar. The thickness of films was 2.0 J.lm. The structure of the films has been examined by x-ray diffraction .The detection properties·: [responsivity (RA), quantum efficiency( ll) ,signal-to-noise ratio (SIN) ,detectivity (D) and noise equivalent power (NEP) ] have been measured for both value ofx .It was found that the responsivity, 11. I/ and SIN have increased while NEP decreased when the value of x increases from 0.50 to 0.53.
