Author/Authors :
Khalaf, Mohammed K. Ministry of Science Technology - laser and optoelectronic center, Iraq , Mohammed, Ghuson H. University of Baghdad - College of Science - Departmnt of Physics, Iraq , Hadi, Fadhil Y. University of Baghdad - College of Science - Department of Physics, Iraq
Abstract :
Near intrinsic single crystal of InSb compound has been grown from the pure melting by annealing of two-zone furnuse technique and its some physical properties are characterized at room temperature. X-ray diffraction (XRD) observations show that the crystallographic direction is well oriented within (220) plane, while it is indicated that there is a poly crystalline structure for InSb thin films. The absorbance spectra at the fundamental absorption edge has been measured .The values of optical energy gap of single crystal specimens and deposited InSb films were calculated of 0.16 eV and 0.17 eV respectively at room temperature. The aim in this paper is to study and compare the growth of single crystal and thin film to InSb.
