Thermoelectric Power of Layered Chalcogenides GaTe Crystals

Thermoelectric power (TEP) measurements of Galliummono-telluride single crystals have been studied over the temperaturerange 193-583K. GaTe single crystals grown from melt by the modifiedBridgman technique. The results of measurements indicate thatthe investigated samples turned out to be p-type nature. Investigationof GaTe compound revealed that it has interesting properties. Manyphysical parameters were determined such as carrier mobilities,effective masses of free charge carriers, diffusion coefficient anddiffusion length as well as the relaxation time. The highest value offigure of merit for GaTe permits the practical application as thermo electricelement.