Author/Authors :
Al-Ghamdi, A. A. King Abdulaziz University - Faculty of Science - Physics Department, Saudi arabia , Nagat, A.T. Girls Colleges of Education in Jeddah - Physics Department, Saudi Arabia , Al-Hazmi, F.S. King Abdulaziz University - Faculty of Science - Physics Department, Saudi arabia , Al-Heniti, S. King Abdulaziz University - Faculty of Science - Physics Department, Saudi arabia , Bahabri, F.S South Valley University - Faculty of Science - Physics Department, Egypt , Mobarak, M.M. King Abdulaziz University - Faculty of Science - Physics Department, Saudi arabia , Alharbi, S.R. King Abdulaziz University - Faculty of Science - Physics Department, Saudi arabia
Abstract :
High efficiency design for single crystal growth from meltbased on Bridgman technique is constructed locally and used forgrowing TlInTe2 crystals. Measurements of Hall coefficient and DCelectrical conductivity covering a temperature range from 158 to 473K were conducted. The investigated samples have P-Typeconductivity with RH of 2.3 ~ 10^9 cm3/coul. at room temperature andcarrier concentrations as 2.81 ~1069 cm^-3. Energy gap ΔEg andionization energy ƒ¢Ea were estimated as 0.72 eV and 0.113 eV,respectively. The diffusion coefficient, diffusion length, as well asrelaxation time were evaluated, and the scattering mechanism ofcharge carrier was checked.
