Author/Authors :
Arjmandi, N. sharif university of technology - Department of Electrical Engineering, تهران, ايران , Sasanpour, P. sharif university of technology - Institute for NanoScience and NanoTechnology (INST) and Center of Excellence for Nanostructures, تهران, ايران , Rashidian, B. sharif university of technology - Department of Electrical Engineering, تهران, ايران
Abstract :
A simple process for the chemical vapor deposition of ultra SD single-wall carbon nanotubes has been developed. In this process, an iron nitrate nonahydrate solution in isopropyl alcohol with a concentration of (400 (mu)gr/milt) was used to catalyst nanoparticle formation on an oxidized silicon wafer. The oxide on the substrate was made of a thick layer of wet oxide sandwiched between two thin layers of dry oxide. The process results in semiconducting Single-Walled carbon NanoTubes (SWNTs) with diameters of less than 0.7 nm and more than a 1 ev band gap energy, which are amongst the smallest diameters of SWNTs ever reported.
