Author/Authors :
Putranto, Dedy Septono Catur Shizuoka University - Research Institute of Electronics, Japan , Putranto, Dedy Septono Catur university of indonesia - Electrical Engineering Department, Indonesia , Du, Wei Shizuoka University - Research Institute of Electronics, Japan , Satoh, Hiroaki Shizuoka University - Research Institute of Electronics, Japan , Ono, Atsushi Shizuoka University - Research Institute of Electronics, Japan , Priambodo, Purnomo Sidi university of indonesia - Electrical Engineering Department, Indonesia , Hartanto, Djoko university of indonesia - Electrical Engineering Department, Indonesia , Inokawa, Hiroshi Shizuoka University - Research Institute of Electronics, Japan
Abstract :
Hole lifetime in the silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) singlephoton detector was evaluated by the analysis of drain current histograms for different light intensities and substrate voltages. It was found that the peaks in the histogram corresponding to the larger number of stored holes grew as the gate bias decreased. This was attributed not to the increased light absorption efficiency or collection efficiency of the photo-generated holes, but to the prolonged hole lifetime presumably caused by the higher transverse electric field inside the body of SOI MOSFET.
Keywords :
hole lifetime SOI MOSFET , light absorption efficiency , single , photon detector
