Author/Authors :
Ebrahiminejad, Zhaleh Department of Physics - West Tehran Branch Islamic Azad University, Tehran, Iran , Masoudi, Farhad Department of Physics - K.N. Toosi University of Technology, Tehran, Iran , Hoshang Ramezani, Amir Department of Physics - West Tehran Branch Islamic Azad University, Tehran, Iran , Hosseinzadeh, Siamak Center for Asset Integrity Management - University of Pretoria, Pretoria, South Africa , Asgary, Somayeh Department of Physics - West Tehran Branch Islamic Azad University, Tehran, Iran
Abstract :
In the present work, the effect of roughness in resonant tunneling diodes has been
considered to track two main goals. At first, the roughness impact on the transport through
these heterojunctions has been studied before investigating the roughness type effect. For
calculating the electrical transport, the transfer matrix technique has been used in the
simulations. Two different standard methods of deposition - Random deposition (RD),
and Ballistic deposition (BD)- have been applied to generate two dissimilar rough
interfaces. The scattering process reduces the transport probability. The conductivity as a
function of voltage has also been calculated. Effect of interface roughness on the peak-tovalley
current ratio in the presence of roughness has been discussed. The results show that
the scattering effect it significant. As the applied voltage increases, at first, the value of
current reaches its maximum amount, and then with increasing the voltage, the current
falls in a negative differential resistance region.
Keywords :
Standard deposition method , Transport , Current density , Roughness
