Title of article :
Silylium Ion to Silylium Ion Rearrangement Caused by 1,3-Methyl Migration
Author/Authors :
Sekiguchi، Akira نويسنده , , Nakamoto، Masaaki نويسنده , , Fukawa، Tomohide نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
One-electron oxidation of a stable tris[di-tert-butyl(methyl)silyl]silyl radical by the triphenylmethylium ion produces the corresponding silylium ion 2. However, this underwent a rapid intramolecular methyl group migration to form a more stable silylium ion 4 via a Wagner–Meerwein type rearrangement. The facile 1,3-methyl migration over the three peripheral silicon atoms in 4 was observed in NMR time scale.
Keywords :
grinding , Surface finish , Application-production research , prediction , Power requirement , Genetic-fuzzy system
Journal title :
CHEMISTRY LETTERS
Journal title :
CHEMISTRY LETTERS