Designing an InGaP/InAlGaP Double Junction Solar Cell without an Anti-Reflection Coating by Adding a New Window Layer in the Upper Junction and Optimizing the Back Surface Field Layer

The present study proposes a novel indium gallium phosphide/aluminum gallium indium phosphide (InGaP/InAlGaP) double junction solar cell without an anti-reflection coating that includes an upper InGaP cell, a lower InAlGaP cell, and a gallium arsenide (GaAs) tunnel junction. To increase the efficiency of the cell, a new window layer was used at the upper junction. To achieve higher efficiency, the researchers also optimized the back surface field layer of the lower cell. The results were analyzed via numerical modeling with Silvaco/Atlas software under the AM1.5 radiation spectrum. Findings suggested that using the sun=1 parameter, the obtained maximum values of short-circuit current, open-circuit voltage, fill factor, and efficiency parameters for the proposed solar cell structure were Jsc = 24.078 mA/cm2, Voc = 3.41886, FF = 91.1836, and Eff = 71.721%, respectively.