Novel Electron-Beam Molecular Resists with High Resolution and High Sensitivity for Nanometer Lithography

A novel class of chemically-amplified, electron-beam molecular resists for nanometer lithography were created. These molecular resists functioned as positive resists in the presence of an acid generator, exhibiting a high sensitivity of (almost equal)2 (mu)C cm^-2 and enabling the fabrication of (almost equal)25 nm line patterns.