Title of article
Delocalization of Positive and Negative Charge Carriers on Oligo- and Poly-fluorenes Studied by Low-Temperature Matrix Isolation Technique
Author/Authors
Koizumi، Yoshiko نويسنده , , Seki، Shu نويسنده , , Acharya، Anjali نويسنده , , Saeki، Akinori نويسنده , , Tagawa، Seiichi نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
-128
From page
129
To page
0
Abstract
Oligofluorenes with well-defined chain length (n = 1–5) have been synthesized by step-by-step Suzuki coupling reaction as the basis sets of conjugated segments in polyfluorenes. Cation and anion radicals of oligofluorenes (n > 2) showed intense and clear three infrared absorptions attributed to transitions between SOMO state delocalized over fluorene moieties and valence (HOMOs) or conduction states (LUMOs) in the backbone. The transition energies of the IR band decreased linearly from 1.2 to 0.55 eV in the range of unit number while 1-D exciton transition energies showed apparent saturation at n > 5. This implied that delocalization degree of excess electrons or holes along fluorene chains would saturate at larger number of units than that of neutral excitons.
Keywords
Application-production research , Genetic-fuzzy system , prediction , grinding , Power requirement , Surface finish
Journal title
CHEMISTRY LETTERS
Serial Year
2004
Journal title
CHEMISTRY LETTERS
Record number
28803
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