Title of article :
Optimization of plasma-deposited silicon oxinitride films for optical channel waveguides
Author/Authors :
Gorecki، Christophe نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
-14
From page :
15
To page :
0
Abstract :
In view of applications of SiOxNy thin films in MOEMS technology, a study of the optomechanical characteristics of the PECVD deposited material are investigated. To optimize the quality of SiOxNy layers we establish the relationship between the chemical properties, optical performances, micromechanical stress, and growth parameters of deposited films. To use the SiOxNy thin film for the core layer of a strip-loaded waveguide, we propose preparation conditions of SiOxNy that offer a low-loss optical waveguide with well-controlled refractive index, based on a low-internal stress multilayer structure.
Keywords :
Hodgkin-Huxley equation , Bifurcation , Current-voltage relationship , Excitable media
Journal title :
OPTICS & LASERS IN ENGINEERING
Serial Year :
2000
Journal title :
OPTICS & LASERS IN ENGINEERING
Record number :
30149
Link To Document :
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