Laser technology for submicron-doped layers formation in semiconductors

A p–n junctions formed by means of laser stimulated diffusion of dopants into semiconductors (Si, GaAs, GaP, InP) were investigated. SIMS and AES spectroscopy methods were used to measure the depth profiles of the incorporated impurities: B into Si, Zn into GaAs, GaP and InP. The volt-capacity method using an electrochemical profilometer was used for the charge carrier concentration distribution in the doped layer. Spectroscopy investigations have shown that during solid phase diffusion locally doped regions almost exactly reproduce the shape and size of the windows in the dielectrics. The lateral diffusion of the dopant is about 0.01mum. The concentration profiles of charge carrier distribution in the doped layers clearly show the specific processes of dopant diffusion and evaporation at laser solid-phase doping of semiconductors. The comparative analysis of parameters of formed semiconductor structures shows that the procedure of laser solid-phase doping can stand the comparison with technology of implantation and conventional diffusion technology. Since the laser solid-phase doping ensures also a high degree of reproducibility of p–n junction parameters, it can be effectively used for electronic devices fabrication.