Title of article :
Characterization of oxygen impurity concentration in silicon based on thermal emission measurements
Author/Authors :
V. K. Malyutenko، نويسنده , , V. I. Chernyakovsky، نويسنده , , T. Piotrowski، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
6
From page :
499
To page :
504
Journal title :
Infrared Physics & Technology
Serial Year :
1996
Journal title :
Infrared Physics & Technology
Record number :
327453
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=327453
