Title of article
Characteristics of diode structures based on the p-Pbte(Ga)–In contact
Author/Authors
B. A. Akimov، نويسنده , , E. V. Bogdanov، نويسنده , , V. A. Bogoyavlenskiy، نويسنده , , L. I. Ryabova، نويسنده , , V. I. Shtanov، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
6
From page
287
To page
292
Keywords
Schottky barrier , Current–voltage characteristics , Photoconductivity , Impurities and defects
Journal title
Infrared Physics & Technology
Serial Year
1998
Journal title
Infrared Physics & Technology
Record number
327570
Link To Document