Title of article :
Modulation-doping in 3–5 μm GaAs/AlAs/AlGaAs double barrier quantum well infrared photodetectors: an alternative to achieve high photovoltaic performance and high temperature detection
Author/Authors :
E. Luna، نويسنده , , A. Guzman، نويسنده , , J. L. Sanchez-Rojas، نويسنده , , E. Calleja، نويسنده , , E. Munoz، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
8
From page :
383
To page :
390
Keywords :
Molecular Beam Epitaxy , Quantum well devices , Infrared photodetectors , Photovoltaic detectors
Journal title :
Infrared Physics & Technology
Serial Year :
2003
Journal title :
Infrared Physics & Technology
Record number :
327846
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=327846
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