On the growth conditions of 3–5 μm well-doped AlGaAs/AlAs/GaAs infrared detectors and its relation to the photovoltaic effect studied by transmission electron microscopy

E. Luna، نويسنده , , A. Guzman، نويسنده , , A. Trampert، نويسنده , , J. L. Sanchez-Rojas، نويسنده , , E. Calleja، نويسنده ,

روزنامه با شماره پیاپی سال 2003

8

391

398

Photovoltaic effects , Quantum well devices , Molecular Beam Epitaxy , Transmission electronmicroscopy , Infrared photodetectors

Infrared Physics & Technology

2003

Infrared Physics & Technology

327847