Title of article :
Electrical and photoelectrical properties of isotype N+-GaSb/n0-GaInAsSb type II heterojunctions
Author/Authors :
M. A. Afrailov، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Keywords :
Type II heterojunctions with staggered band alignment , Isotype structures , Photo-response , Dark current
Journal title :
Infrared Physics & Technology
Journal title :
Infrared Physics & Technology
