مرکز منطقه ای اطلاع رساني علوم و فناوري - Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band

Title of article :

Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band

Author/Authors :

M. I. Daunov، نويسنده , , I. K. Kamilov and A. B. Magomedov ، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 1997

Pages :

From page :

309

To page :

316

Journal title :

Journal of Experimental and Theoretical Physics

Serial Year :

1997

Journal title :

Journal of Experimental and Theoretical Physics

Record number :

328833

Link To Document :