مرکز منطقه ای اطلاع رساني علوم و فناوري - Erratum: Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band [JETP 84, 309

Title of article :

Erratum: Realization of a heavily doped and fully compensated semiconductor state in a crystalline semiconductor with a deep impurity band [JETP 84, 309–316 (February 1997)]

Author/Authors :

M. I. Daunov، نويسنده , , I. K. Kamilov and A. B. Magomedov ، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 1997

Pages :

From page :

1236

To page :

1236

Journal title :

Journal of Experimental and Theoretical Physics

Serial Year :

1997

Journal title :

Journal of Experimental and Theoretical Physics

Record number :

328955

Link To Document :

https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=328955