مرکز منطقه ای اطلاع رساني علوم و فناوري - Resonant tunneling of electrons through virtual interference states formed as a result of reflection from the boundary of strongly doped region of GaAs

Title of article :

Resonant tunneling of electrons through virtual interference states formed as a result of reflection from the boundary of strongly doped region of GaAs

Author/Authors :

Yu. N. Khanin، نويسنده , , E. E. Vdovin and Yu. V. Dubrovskii ، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2004

Pages :

From page :

530

To page :

538

Journal title :

Journal of Experimental and Theoretical Physics

Serial Year :

2004

Journal title :

Journal of Experimental and Theoretical Physics

Record number :

330921

Link To Document :

https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=330921