مرکز منطقه ای اطلاع رساني علوم و فناوري - ArF-excimer-laser annealing of 3C–SiC films—diode characteristics and numerical simulation

Title of article :

ArF-excimer-laser annealing of 3C–SiC films—diode characteristics and numerical simulation

Author/Authors :

T. Mizunami and N. Toyama، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2003

Pages :

From page :

451

To page :

456

Keywords :

silicon carbide , Laser annealing , excimer laser

Journal title :

OPTICS & LASER TECHNOLOGY

Serial Year :

2003

Journal title :

OPTICS & LASER TECHNOLOGY

Record number :

334963

Link To Document :