مرکز منطقه ای اطلاع رساني علوم و فناوري - Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-μm semiconductor lasers

Title of article :

Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-μm semiconductor lasers

Author/Authors :

Sheng-Horng Yen، نويسنده , , Mei-Ling Chen and Yen-Kuang Kuo، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2007

Pages :

From page :

1432

To page :

1436

Keywords :

semiconductor lasers , Gain properties , InGaAsN

Journal title :

OPTICS & LASER TECHNOLOGY

Serial Year :

2007

Journal title :

OPTICS & LASER TECHNOLOGY

Record number :

335556

Link To Document :