Title of article :
Physical CAD Model for High-Voltage IGBTs Based on Lumped-Charge Approach.
Author/Authors :
F. Iannuzzo and G. Busatto، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Keywords :
Lumped-Charge method , two-dimensional (2-D) MEDICIsimulations. , Insulated gate bipolar transistor (IGBT) model
Journal title :
IEEE TRANSACTIONS ON POWER ELECTRONICS
Journal title :
IEEE TRANSACTIONS ON POWER ELECTRONICS
