Title of article :
Suitability and Optimization of High Voltage IGBT’s for Series Connection With Active Voltage Clamping.
Author/Authors :
F. Bauer، نويسنده , , L. Meysenc، نويسنده , , and A. Piazzesi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Keywords :
High-voltage integrated gate bipolar transistors(HV IGBTs) , nonpunchthrough (NPT) , punchthrough (PT) , reversebiased safe operating area (RBSOA).
Journal title :
IEEE TRANSACTIONS ON POWER ELECTRONICS
Journal title :
IEEE TRANSACTIONS ON POWER ELECTRONICS