• Title of article

    Two-Step Parameter Extraction Procedure With Formal Optimization for Physics-Based Circuit Simulator IGBT and PIN Diode Models

  • Author/Authors

    A. T. Bryant، نويسنده , , X. Kang and H. M. Shang، نويسنده , , E. Santi، نويسنده , , P. R. Palmer and H. S. Rajamani، نويسنده , , and J. L. Hudgins، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2006
  • Pages
    15
  • From page
    295
  • To page
    309
  • Keywords
    Insulated gate bipolar transistor (IGBT) model , optimized parameter extraction , parameter extraction , powerdiode model , semiconductor modeling.
  • Journal title
    IEEE TRANSACTIONS ON POWER ELECTRONICS
  • Serial Year
    2006
  • Journal title
    IEEE TRANSACTIONS ON POWER ELECTRONICS
  • Record number

    340800

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=340800