Title of article :
Active Gate Voltage Control of Turn-on and Turn-off in Insulated Gate Transistors
Author/Authors :
N. Idir، نويسنده , , R. Bausière، نويسنده , , and J. J. Franchaud، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2006
Keywords :
Active gate voltage control (AGVC) , insulated gate bipolar transistors(IGBTs) , electromagneticinterference (EMI) , metal–oxide–semiconductor field-effect transistor(MOSFET).
Journal title :
IEEE TRANSACTIONS ON POWER ELECTRONICS
Journal title :
IEEE TRANSACTIONS ON POWER ELECTRONICS