Optimizing Drain Current, Inversion Level, and Channel Length in Analog CMOS Design

D. M. Binkley، نويسنده , , B. J. Blalock and J. M. Rochelle ، نويسنده ,

روزنامه با شماره پیاپی سال 2006

27

137

163

analog MOS , thermal and flicker noi , CMOS design , Design methodology , optimization , weak , moderate , and strong inversion , MOS sizing , early voltage , intrinsic voltage gain , tiransconductance efficiency , intrinsic bandwidth , dc voltage and currentmismatch

Analog Integrated Circuits and Signal Processing

2006

Analog Integrated Circuits and Signal Processing

367628