مرکز منطقه ای اطلاع رساني علوم و فناوري - Field-enhanced nonequilibrium C/V and I/V characteristics of MOS capacitor under linear voltage ramp bias

Title of article :

Field-enhanced nonequilibrium C/V and I/V characteristics of MOS capacitor under linear voltage ramp bias

Author/Authors :

Zhang، نويسنده , , X.; Ding، نويسنده , , K.، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 1996

Pages :

From page :

343

To page :

347

Journal title :

I E T Circuits, Devices and Systems

Serial Year :

1996

Journal title :

I E T Circuits, Devices and Systems

Record number :

371134

Link To Document :