مرکز منطقه ای اطلاع رساني علوم و فناوري - Experimental 128-kbit ferroelectric memory with 1012 endurance and 10-year data retention

Title of article :

Experimental 128-kbit ferroelectric memory with 1012 endurance and 10-year data retention

Author/Authors :

Chung، نويسنده , , Y.، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2002

Pages :

From page :

136

To page :

142

Journal title :

I E T Circuits, Devices and Systems

Serial Year :

2002

Journal title :

I E T Circuits, Devices and Systems

Record number :

371471

Link To Document :