مرکز منطقه ای اطلاع رساني علوم و فناوري - High performance ferroelectric memory with grounded-plate PMOS-gate cell technology

Title of article :

High performance ferroelectric memory with grounded-plate PMOS-gate cell technology

Author/Authors :

Chung، نويسنده , , Y.، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2003

Pages :

From page :

217

To page :

226

Journal title :

I E T Circuits, Devices and Systems

Serial Year :

2003

Journal title :

I E T Circuits, Devices and Systems

Record number :

371536

Link To Document :