Title of article :
Realising high-current gain p-n-p transistors using a novel surface accumulation layer transistor (SALTran) concept
Author/Authors :
Kumar، نويسنده , , M.J.; Parihar، نويسنده , , V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
178
To page :
182
Journal title :
I E T Circuits, Devices and Systems
Serial Year :
2005
Journal title :
I E T Circuits, Devices and Systems
Record number :
371706
Link To Document :
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