مرکز منطقه ای اطلاع رساني علوم و فناوري - Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES

Title of article :

Real-time monitoring of the growth and decomposition of SiO2 layers on Si(001) by a combined method of RHEED and AES

Author/Authors :

Yuji Takakuwa and Fumiaki Ishida، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2001

Pages :

From page :

401

To page :

407

Keywords :

RHEED , AES , Real-time monitoring , Interface roughness , Surface reactionmodel , Si thermal oxidation , Si(001)231 , Decomposition , Si adatom

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2001

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

379518

Link To Document :