مرکز منطقه ای اطلاع رساني علوم و فناوري - Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy

Title of article :

Characterization of advanced gate stacks for Si CMOS by electron energy-loss spectroscopy in scanning transmission electron microscopy

Author/Authors :

Brendan Foran، نويسنده , , Joel Barnett، نويسنده , , Patrick S. Lysaght، نويسنده , , Melody P. Agustin and Susanne Stemmer، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2005

Pages :

From page :

151

To page :

160

Keywords :

electron energy-loss spectroscopy , Gate dielectrics , Z-contrast imaging , STEMElectron energy-loss spectroscopy , Gate dielectrics , Z-contrast imaging , stem

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2005

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

380217

Link To Document :

https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=380217