مرکز منطقه ای اطلاع رساني علوم و فناوري - Imaging of doped Si in low and very low voltage SEM: the contrast interpretation

Title of article :

Imaging of doped Si in low and very low voltage SEM: the contrast interpretation

Author/Authors :

G.H. Jayakody، نويسنده , , T.R.C. Wells and M.M. El-Gomati، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2005

Pages :

From page :

235

To page :

241

Keywords :

Scanning electron microscopy , low voltage , Ultra high vacuum

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2005

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

380224

Link To Document :