مرکز منطقه ای اطلاع رساني علوم و فناوري - Valence band discontinuity at the GaN/SiC(0 0 0 1) heterojunction studied in situ by synchrotron-radiation photoelectron spectroscopy

Title of article :

Valence band discontinuity at the GaN/SiC(0 0 0 1) heterojunction studied in situ by synchrotron-radiation photoelectron spectroscopy

Author/Authors :

C.-H. Chen ، نويسنده , , L. Aballe، نويسنده , , R. Klauser، نويسنده , , T.U. Kampen and K. Horn، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 2005

Pages :

From page :

425

To page :

428

Keywords :

Angle-resolved photoelectron spectroscopy , GaN/SiC heterojunction

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Serial Year :

2005

Journal title :

JOURNAL OF ELECTRON SPECTROSCOPY & RELATED PHENOMENA

Record number :

380326

Link To Document :