Title of article :
Original cabling conditions to insure balanced current during switching transitions between paralleled semiconductors
Author/Authors :
Jeannin، نويسنده , , P.-O.، نويسنده , , Schanen، نويسنده , , J.-L.، نويسنده , , M. CLAVEL، نويسنده , , E.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
8
From page :
181
To page :
188
Keywords :
insulated gate bipolar transistor , MOS device , paralleling , simulation. , power semiconductor devices
Journal title :
IEEE Transactions on Industry Applications
Serial Year :
2002
Journal title :
IEEE Transactions on Industry Applications
Record number :
381366
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=381366
