Title of article :
Matched Pair of CoolMOS Transistor With SiC-Schottky Diode—Advantages in Application
Author/Authors :
Leo Lorenz، نويسنده , , Gerald Deboy، نويسنده , , and Ilia Zverev، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
8
From page :
1265
To page :
1272
Keywords :
SiC , Power MOSFET , switching behavior. , electrical characteristics , CoolMOS , powerfactor-correction (PFC) boost converter , power loss measurement
Journal title :
IEEE Transactions on Industry Applications
Serial Year :
2004
Journal title :
IEEE Transactions on Industry Applications
Record number :
381650
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=381650
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