Overcoming limitations of lumped MOS models

Describes, at a fundamental level, limitations of the lumped approach to model the transient fast signal (or RF) behavior of MOS devices. Specifically, we analyzed the transient behavior of the relaxation time lumped model. We discussed the pros and cons of a distributed approach as a more accurate (but computationally less efficient) alternative to a lumped model. In the process, we hope to have provided a deeper understanding of the strengths and weaknesses of the MOS transient models for RF applications